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875924 0JXXX 15PQF 320240 7660DM 9005D6 LXT906PC 21010
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To Download MMBD5819 Datasheet File

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  Datasheet File OCR Text:
  0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 pin array features power dissipation: p d = 300mw collector current: i f =1a collector-base voltage: v r =40v marking marking sl electrical characteristics ta = 25 parameter symbol testconditons min typ max unit reverse breakdown voltage v (br)r i r =1ma 40 v i f =1a 0.6 i f =3a 0.9 v r = 20v 1 v r = 40v 1 diode capacitance c d v r = 0, f = 1.0mhz 120 pf forward voltage (pulse test) v f v reverse voltage leakage current i r a absolute maximum ratings ta = 25 parameter symbol rating unit collector current i f 1a collector-base voltage v r 40 v power dissipation p d 300 mw operating and storage junction temperature range t j, t stg -55to+150 MMBD5819 product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123


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